3-114 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. http://www.intersil.com or 407-727-9207 | copyright ? intersil corporation 1999 ha-5104/883 low noise, high performance, quad operational ampli?er description low noise and high performance are key words describing the unity gain stable ha-5104/883. this general purpose quad ampli?er offers an array of dynamic speci?cations including 1v/ m s slew rate (min), and 8mhz bandwidth (typ). complementing these outstanding parameters are very low noise speci?cations of 4.3nv/ ? hz at 1khz (typ) or 6nv/ ? hz (max). fabricated using the intersil standard high frequency d.i. process, these operational ampli?ers also offer excellent input speci?cations such as 2.5mv (max) offset voltage and 75na (max) offset current. complementing these speci?ca- tions are 100db (min) open loop gain and 55db channel separation (min). economically, the ha-5104/883 also con- sumes a very moderate amount of power (225mw per pack- age) while also saving board space and cost. this impressive combination of features make this ampli?er ideally suited for designs ranging from audio ampli?ers and active ?lters to the most demanding signal conditioning and instrumentation circuits. ordering information part number temperature range package ha1-5104/883 -55 o c to +125 o c 14 lead cerdip ha4-5104/883 -55 o c to +125 o c 20 lead ceramic lcc features ? this circuit is processed in accordance to mil-std- 883 and is fully conformant under the provisions of paragraph 1.2.1. ? low input noise voltage density at 1khz. . 6nv/ ? hz (max) 4.3nv/ ? hz (typ) ? slew rate . . . . . . . . . . . . . . . . . . . . . . . . . . . 1v/ m s (min) 3v/ m s (typ) ? unity gain bandwidth . . . . . . . . . . . . . . . . . 8mhz (typ) ? high open loop gain (full temp) . . . . . 100kv/v (min) 250kv/v (typ) ? high cmrr, psrr (full temp) . . . . . . . . . . . 86db (min) 100db (typ) ? low offset voltage drift . . . . . . . . . . . . . . 3 m v/ o c (typ) ? no crossover distortion ? standard quad pinout applications ? high q active filters ? audio ampli?ers ? integrators ? signal generators ? instrumentation ampli?ers july 1994 spec number 511014-883 file number 3710 pinouts ha-5104/883 (cerdip) top view ha-5104/883 (clcc) top view 1 2 3 4 5 6 7 14 13 12 11 10 9 8 1 + 4 + 2 + 3 + v+ out 1 -in1 +in1 +in2 -in2 out 2 v- out 3 out 4 -in3 +in3 +in4 -in4 -- - - 4 5 6 7 8 9101112 13 32 1 20 19 15 14 18 17 16 4 + 3 + 2 + 1 + -in1 out 1 nc out 4 -in4 +in4 nc v- nc +in3 +in1 nc v+ nc +in2 -in2 out 2 nc out 3 -in3 - - --
3-115 speci?cations ha5104/883 absolute maximum ratings thermal information voltage between v+ and v- terminals . . . . . . . . . . . . . . . . . . . . 40v differential input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7v voltage at either input terminal . . . . . . . . . . . . . . . . . . . . . . v+ to v- peak output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . inde?nite (one ampli?er shorted to ground) junction temperature (t j ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 o c storage temperature range . . . . . . . . . . . . . . . . . -65 o c to +150 o c esd rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000v lead temperature (soldering 10s) . . . . . . . . . . . . . . . . . . . . +300 o c thermal resistance q ja q jc cerdip package . . . . . . . . . . . . . . . . . . . 75 o c/w 20 o c/w ceramic lcc package . . . . . . . . . . . . . . 65 o c/w 15 o c/w package power dissipation limit at +75 o c for t j +175 o c cerdip package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33w ceramic lcc package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54w package power dissipation derating factor above +75 o c cerdip package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mw/ o c ceramic lcc package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mw/ o c caution: stresses above those listed in absolute maximum ratings may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?cation is not im plied. operating conditions operating temperature range . . . . . . . . . . . . . . . . -55 o c to +125 o c operating supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 5v to 15v v incm 1/2 (v+ - v-) r l 3 2k w table 1. dc electrical performance characteristics device tested at: v supply = 15v, r source = 100 w , r load = 500k w , v out = 0v, unless otherwise speci?ed. parameters symbol conditions group a subgroups temperature limits units min max input offset voltage v io v cm = 0v 1 +25 o c -2.5 2.5 mv 2, 3 +125 o c, -55 o c -3.0 3.0 mv input bias current +i b v cm = 0v, +r s = 10k w , -r s = 100 w 1 +25 o c -200 200 na 2, 3 +125 o c, -55 o c -325 325 na -i b v cm = 0v, +r s = 100 w , -r s = 10k w 1 +25 o c -200 200 na 2, 3 +125 o c, -55 o c -325 325 na input offset current i io v cm = 0v, +r s = 10k w , -r s = 10k w 1 +25 o c -75 75 na 2, 3 +125 o c, -55 o c -125 125 na common mode range +cmr v+ = +3v, v- = -27v 1 +25 o c +12 - v 2, 3 +125 o c, -55 o c +12 - v -cmr v+ = +27v, v- = -3v 1 +25 o c - -12 v 2, 3 +125 o c, -55 o c - -12 v large signal voltage gain +a vol v out = 0v and +10v, r l = 2k w 4 +25 o c 100 - kv/v 5, 6 +125 o c, -55 o c 100 - kv/v -a vol v out = 0v and -10v, r l = 2k w 4 +25 o c 100 - kv/v 5, 6 +125 o c, -55 o c 100 - kv/v common mode rejection ratio +cmrr d v cm = +5v, v+ = +10v, v- = -20v, v out = -5v 1 +25 o c86-db 2, 3 +125 o c, -55 o c86 - db -cmrr d v cm = -5v, v+ = +20v, v- = -10v, v out = +5v 1 +25 o c86-db 2, 3 +125 o c, -55 o c86 - db spec number 511014-883
3-116 spec number 511014-883 speci?cations ha5104/883 output voltage swing +v out1 r l = 2k w 1 +25 o c10-v 2, 3 +125 o c, -55 o c10 - v -v out1 r l = 2k w 1 +25 o c - -10 v 2, 3 +125 o c, -55 o c - -10 v +v out2 r l = 10k w 1 +25 o c12-v 2, 3 +125 o c, -55 o c12 - v -v out2 r l = 10k w 1 +25 o c - -12 v 2, 3 +125 o c, -55 o c - -12 v output current +i out v out = -5v 1 +25 o c10-ma 2, 3 +125 o c, -55 o c10 - ma -i out v out = +5v 1 +25 o c - -10 ma 2, 3 +125 o c, -55 o c - -10 ma quiescent power supply current +i cc v out = 0v, i out = 0ma 1 +25 o c - 6.5 ma 2, 3 +125 o c, -55 o c - 7.5 ma -i cc v out = 0v, i out = 0ma 1 +25 o c -6.5 - ma 2, 3 +125 o c, -55 o c -7.5 - ma power supply rejection ratio +psrr d v sup = 10v, v+ = +10v, v- = -15v v+ = +20v, v- = -15v 1 +25 o c86-db 2, 3 +125 o c, -55 o c86 - db -psrr d v sup = 10v, v+ = +15v, v- = -10v v+ = +15v, v- = -20v 1 +25 o c86-db 2, 3 +125 o c, -55 o c86 - db table 2. ac electrical performance characteristics device tested at: v supply = 15v, r source = 50 w , r load = 2k w , c load = 50pf, a vcl = +1v/v, unless otherwise speci?ed. parameters symbol conditions group a subgroups temperature limits units min max slew rate +sr v out = -3v to +3v 4 +25 o c1-v/ m s -sr v out = +3v to -3v 4 +25 o c1-v/ m s rise and fall time t r v out = 0 to +200mv 10% t r 90% 4 +25 o c - 200 ns t f v out = 0 to -200mv 10% t f 90% 4 +25 o c - 200 ns overshoot +os v out = 0 to +200mv 4 +25 o c - 35 % -os v out = 0 to -200mv 4 +25 o c - 35 % table 1. dc electrical performance characteristics (continued) device tested at: v supply = 15v, r source = 100 w , r load = 500k w , v out = 0v, unless otherwise speci?ed. parameters symbol conditions group a subgroups temperature limits units min max
3-117 spec number 511014-883 speci?cations ha5104/883 table 3. electrical performance characteristics device characterized at: v supply = 15v, r load = 2k w , c load = 50pf, a vcl = 1v/v, unless otherwise speci?ed. parameters symbol conditions notes temperature limits units min max differential input resistance r in v cm = 0v 1 +25 o c 250 - k w input noise voltage density e n r s = 20 w , f o = 1000hz 1 +25 o c-6nv /? hz input noise current density i n r s = 2m w , f o = 1000hz 1 +25 o c-3pa /? hz full power bandwidth fpbw v peak = 10v 1, 2 +25 o c 32 - khz minimum closed loop stable gain clsg r l = 2k w , c l = 50pf 1 -55 o c to +125 o c +1 - v/v output resistance r out open loop 1 +25 o c - 270 w quiescent power consumption pc v out = 0v, i out = 0ma 1, 3 -55 o c to +125 o c - 225 mw channel separation cs r s = 1k w , a vcl = 100v/v, v in = 100mv peak at 10khz referred to input 1 +25 o c55-db notes: 1. parameters listed in table 3 are controlled via design or process parameters and are not directly tested at ?nal production. these param- eters are lab characterized upon initial design release, or upon design changes. these parameters are guaranteed by characteriz ation based upon data from multiple production runs which re?ect lot to lot and within lot variation. 2. full power bandwidth guarantee based on slew rate measurement using fpbw = slew rate/(2 p v peak ). 3. quiescent power consumption based upon quiescent supply current test maximum. (no load on outputs.). table 4. electrical test requirements mil-std-883 test requirements subgroups (see tables 1 and 2) interim electrical parameters (pre burn-in) 1 final electrical test parameters 1 (note 1), 2, 3, 4, 5, 6 group a test requirements 1, 2, 3, 4, 5, 6 groups c and d endpoints 1 note: 1. pda applies to subgroup 1 only.
3-118 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?cation. intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/o r speci?cations at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of p atents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiaries. for information regarding intersil corporation and its products, see web site http://www.intersil.com ha5104/883 die characteristics die dimensions: 95 x 99 x 19 mils 1 mils 2420 x 2530 x 483 m m 25.4 m m metallization: type: al, 1% cu thickness: 16k ? 2k ? glassivation: type: nitride (si3n4) over silox (sio2, 5% phos.) silox thickness: 12k ? 2k ? nitride thickness: 3.5k ? 1.5k ? worst case current density: 1.43 x 10 5 a/cm 2 substrate potential (powered up): unbiased transistor count: 175 process: bipolar dielectric isolation metallization mask layout ha5104/883 +in2 v+ +in1 -in1 out1 out4 -in4 -in3 out3 out2 -in2 +in4 v- +in3 spec number 511014-883
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